| 摘要 |
PROBLEM TO BE SOLVED: To provide a molecular beam epitaxial growth system by which deposition residue present at the inside of a growth chamber can practically perfectly be removed, and to provide a cleaning method therefor. SOLUTION: The cleaning method for a molecular beam epitaxial growth system comprises: a parting stage where, among the components of the molecular beam epitaxial growth system provided with a growth chamber via a connection part, the components being those other than the growth chamber, bonded to the growth chamber via the connection part and the growth chamber are parted in the connection part; a separating stage where the components other than the growth chamber and the growth chamber are separated; a temperature rising stage where the whole of the growth chamber is uniformly heated-up to≥300°C; and a heat insulating stage where the growth chamber is heat-insulated to≥300°C. While evacuating the inside of the growth chamber, at least one stage in temperature rising stage and heat insulating stage is performed, and depositions stuck to the inside of the growth chamber are removed by thermal energy and are exhausted to the outside of the growth chamber. COPYRIGHT: (C)2004,JPO&NCIPI
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