发明名称 SEMICONDUCTOR INTEGRATED CIRCUIT
摘要 <p>A high-threshold first conductivity transistor and a low-threshold second conductivity transistor are series-connected between a first actual power source line to be supplied with a power source voltage and a virtual power source line connected to the power source terminal of a circuit block constituted of a low-threshold transistor. The first and second conductivity transistors have reverse polarities. A power source control circuit switches on the first and second conductivity transistors while the circuit block works, and switches off them while the circuit block does not work. The series connection of the low-threshold second conductivity transistor to the high-threshold first conductivity transistor maximizes an increase in the on-resistance of the first and second conductivity transistors and increases the off resistance. Thus, the subthreshold current of the first and second conductivity transistors is suppressed. As a result, the power consumption of the standby period of the semiconductor integrated circuit is cut down.</p>
申请公布号 WO2004079908(A1) 申请公布日期 2004.09.16
申请号 WO2003JP02636 申请日期 2003.03.06
申请人 FUJITSU LIMITED;KAKIUCHI, TAKASHI 发明人 KAKIUCHI, TAKASHI
分类号 H01L27/04;H01L27/092;H03K19/00;(IPC1-7):H03K19/00 主分类号 H01L27/04
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