| 摘要 |
The present invention provides a semiconductor device 200, a method of manufacture therefor and an integrated circuit including the same. In one embodiment of the invention, the semiconductor device 200 includes a floating gate 230 located over a semiconductor substrate 210, wherein the floating gate 230 has a metal control gate 250 located thereover. The semiconductor device 200, in the same embodiment, further includes a dielectric layer 240 located between the floating gate 230 and the metal control gate 250, the dielectric layer 240 having a gettering material located therein.
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