发明名称 |
SEMICONDUCTOR DEVICE WITH IMPROVED PROTECTION FROM ELECTROSTATIC DISCHARGE |
摘要 |
A concentric polygonal metal-oxide-semiconductor field-effect transistor is designed to avoid overlap between corners of the central drain diffusion and inner corners of the surrounding annular gate electrode. For example, the gate electrode may be reduced to separate straight segments by eliminating the corner portions. Alternatively, the drain diffusion may have a cross shape, and the outer annular source diffusion may be reduced to straight segments facing the ends of the cross, or the source and drain diffusions and gate electrodes may all be reduced to separate straight segments. By avoiding electric field concentration in the corner regions, these designs provide enhanced protection from electrostatic discharge. |
申请公布号 |
US2004178454(A1) |
申请公布日期 |
2004.09.16 |
申请号 |
US20030384714 |
申请日期 |
2003.03.11 |
申请人 |
KURODA TOSHIKAZU;SASAKI KATSUHITO |
发明人 |
KURODA TOSHIKAZU;SASAKI KATSUHITO |
分类号 |
H01L23/528;H01L23/58;H01L23/60;H01L23/62;H01L29/06;H01L29/417;H01L29/78;(IPC1-7):H01L23/62 |
主分类号 |
H01L23/528 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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