发明名称 |
Power semiconductor component |
摘要 |
A power semiconductor component includes a first chip having a vertical first transistor. A second chip with a second vertical transistor is mounted on the first chip in such a way that load paths of the two transistors are connected in series. The configuration can easily be expanded into a full bridge.
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申请公布号 |
US6031279(A) |
申请公布日期 |
2000.02.29 |
申请号 |
US19970921820 |
申请日期 |
1997.09.02 |
申请人 |
SIEMENS AKTIENGESELLSCHAFT |
发明人 |
LENZ, MICHAEL |
分类号 |
H01L25/18;(IPC1-7):H01L23/02;H01L23/48;H01L23/52;H01L23/34 |
主分类号 |
H01L25/18 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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