发明名称 Power semiconductor component
摘要 A power semiconductor component includes a first chip having a vertical first transistor. A second chip with a second vertical transistor is mounted on the first chip in such a way that load paths of the two transistors are connected in series. The configuration can easily be expanded into a full bridge.
申请公布号 US6031279(A) 申请公布日期 2000.02.29
申请号 US19970921820 申请日期 1997.09.02
申请人 SIEMENS AKTIENGESELLSCHAFT 发明人 LENZ, MICHAEL
分类号 H01L25/18;(IPC1-7):H01L23/02;H01L23/48;H01L23/52;H01L23/34 主分类号 H01L25/18
代理机构 代理人
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