发明名称 |
Low temperature deposition of complex metal oxides (CMO) memory materials for non-volatile memory integrated circuits |
摘要 |
A method is disclosed to effectively achieve a low deposition temperature of CMO memory materials by facing target sputter deposition of the CMO memory material at relatively low temperatures that give an amorphous film. Subsequently, the CMO material can be melt and re-crystallized with a laser (laser annealing). |
申请公布号 |
US2004180542(A1) |
申请公布日期 |
2004.09.16 |
申请号 |
US20030387773 |
申请日期 |
2003.03.13 |
申请人 |
NAGASHIMA MAKOTO;RINERSON DARRELL;HSIA STEVE K.;MATHENY LARRY |
发明人 |
NAGASHIMA MAKOTO;RINERSON DARRELL;HSIA STEVE K.;MATHENY LARRY |
分类号 |
H01L21/314;H01L21/316;H01L45/00;(IPC1-7):H01L21/476;H01L21/443 |
主分类号 |
H01L21/314 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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