SEMICONDUCTOR ELEMENT AND ITS MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor element having an electrode structure of high etching resistance and provide a method for manufacturing the semiconductor element. SOLUTION: A semiconductor base body 2 for a diode chip 1 is constituted of an n+-type semiconductor area 5, an n-type semiconductor area 6, and a p+-type semiconductor area 7. In addition to n-type impurities, p-type impurities of low concentration are contained in the n+-type semiconductor area 5. Metallic layers consisting of nickel are respectively formed on the surfaces of the n+-type semiconductor area 5 and the p+-type semiconductor area 7 and the metallic layers are treated with heat to form 1st and 2nd silicide layers 11, 13. In addition to silicon and nickel, n-type impurities and p-type impurities are contained in the 1st silicide layer 11. Silicon, nickel and the p-type impurities are contained in the 2nd silicide layer 13. COPYRIGHT: (C)2004,JPO&NCIPI