| 摘要 |
PROBLEM TO BE SOLVED: To provide an optical damage-free semiconductor laser element (AlGaInP sytem) superior in long term reliability in high output driving, and to provide a manufacturing method of the element. SOLUTION: The semiconductor laser element made of an AlGaInP material has a first conductivity first clad layer, an active layer and a second conductivity second clad layer on a semiconductor substrate. A peak wavelength of a photoluminescence in the active layer in a region near a laser resonator end face is made smaller than that of a photoluminescence of an active layer in a region in a laser resonator. As atoms are included in the second conductivity second clad layer in the region near the laser resonator end face. COPYRIGHT: (C)2004,JPO&NCIPI
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