| 发明名称 |
Non-volatile memory device and fabricating method thereof |
| 摘要 |
A non-volatile memory device comprises a gate line that includes a gate dielectric layer, a bottom gate pattern, an inter-gate dielectric and a top gate pattern, which are sequentially stacked. The width of the inter-gate dielectric is narrower than that of the bottom gate pattern.
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| 申请公布号 |
US2004178456(A1) |
申请公布日期 |
2004.09.16 |
| 申请号 |
US20040797754 |
申请日期 |
2004.03.09 |
| 申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
PARK KYU-CHARN;SHIN KWANG-SHIK;CHANG SUNG-NAM |
| 分类号 |
H01L21/8247;H01L27/115;H01L29/423;H01L29/788;H01L29/792;(IPC1-7):H01L21/82;H01L29/94 |
主分类号 |
H01L21/8247 |
| 代理机构 |
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代理人 |
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| 主权项 |
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