Composition for forming porous film, porous film and method for forming the same, interlevel insulator film, and semiconductor device

摘要

Provided is a coating liquid for forming a porous film having desirably controlled thickness and having excellent dielectric and mechanical properties, using the conventional semiconductor process. Specifically, provided is a composition for forming a porous film comprising a condensation product and an organic solvent wherein the condensation product is obtained by hydrolysis and condensation, at presence of a basic catalyst, of one or more silane compounds represented by formula (1): R<1>kSi(OR<2>)4-k, and one or more crosslinking agents represented by formla (2): {Xj(Y)3-jSi-(L)m-}nMZ4-n. Moreover, a method for manufacturing a porous film comprising steps of applying said composition so as to form a film, drying the film and heating the dried film so as to hardent the film, and others are provided.