发明名称 POSITIVE PHOTORESIST COMPOSITION AND METHOD FOR FORMING RESIST PATTERN
摘要 <P>PROBLEM TO BE SOLVED: To provide a positive photoresist composition which prevents deformation of a resist pattern in a high temperature postbaking process and which decreases the degassing amount during high temperature heating. <P>SOLUTION: The positive photoresist composition comprises (A) an alkali-soluble novolac resin having &ge;20,000 mass average molecular weight (Mw) in terms of polystyrene and having &le;4% content of binuclear molecules, (B) a compound containing a phenolic hydroxyl group and having 1,000 Mw, (C) a compound containing a naphthoquinonediazide group and (D) an organic solvent. <P>COPYRIGHT: (C)2004,JPO&NCIPI
申请公布号 JP2004258099(A) 申请公布日期 2004.09.16
申请号 JP20030045781 申请日期 2003.02.24
申请人 TOKYO OHKA KOGYO CO LTD 发明人 MORIO KIMITAKA;AOKI TOMOSABURO;KATO TETSUYA;NAKAJIMA TETSUYA
分类号 G03F7/023;G03F7/004;G03F7/022;G03F7/40 主分类号 G03F7/023
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