| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method for a semiconductor device in which the resistance of a patterned metallic silicide film can be lowered approximately uniformly rapidly at a low temperature without depending upon a pattern shape. SOLUTION: The manufacturing method for the semiconductor device has a process in which a titanium film 15 is formed on a source-drain diffusion layer 5 and on a gate electrode 9; a process in which first heat treatment is carried out to a silicon wafer 1 to which the film 15 is formed, and a titanium silicide film (C49-TiSi<SB>2</SB>) 13 having high resistance is formed on the diffusion layer 5 and on the gate electrode 9; and a process in which second heat treatment is carried out to the film 13, and the film 13 is modified into C54-TiSi<SB>2</SB>having low resistance. The second heat treatment is conducted under conditions of a temperature of 600°C to 650°C under a nitrogen (N<SB>2</SB>) gas atmosphere of 100 MPa to 300 MPa for 30 seconds. COPYRIGHT: (C)2004,JPO&NCIPI
|
