发明名称 |
SnO2 ISFET device, manufacturing method, and methods and apparatus for use thereof |
摘要 |
A SnO2 ISFET device and manufacturing method thereof. The present invention prepares SnO2 as the detection membrane of an ISFET by sol-gel technology to obtain a SnO2 ISFET. The present invention also measures the current-voltage curve for different pH and temperatures by a current measuring system. The temperature parameter of the SnO2 ISFET is calculated according to the relationship between the current-voltage curve and temperature. In addition, the drift rate of the SnO2 ISFET for different pH and hysteresis width of the SnO2 ISFET for different pH loop are calculated by a constant voltage/current circuit and a voltage-time recorder to measure the gate voltage of the SnO2 ISFET.
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申请公布号 |
US2004180463(A1) |
申请公布日期 |
2004.09.16 |
申请号 |
US20040811801 |
申请日期 |
2004.03.30 |
申请人 |
NATIONAL YUNLIN UNIVERSITY OF SCIENCE AND TECHNOLOGY |
发明人 |
CHOU JUNG-CHUAN;WANG YII FANG |
分类号 |
G01N27/414;(IPC1-7):H01L21/00 |
主分类号 |
G01N27/414 |
代理机构 |
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地址 |
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