NITRIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME

摘要

A method for easily manufacturing a nitride semiconductor device having an epitaxial film which is excellent in flatness and crystallinity and a nitride semiconductor device manufactured by such a method are disclosed. The method for manufacturing a nitride semiconductor device that is formed on a semiconductor substrate composed of a compound containing nitrogen and a group 3B element that forms a compound with nitrogen comprises a step wherein a film-forming gas containing a group 3B element material gas and a nitrogen material gas is supplied while heating a semiconductor substrate (1) to a film-forming temperature and a thin film (2) of the compound containing the group 3B element and nitrogen is epitaxially grown on the semiconductor substrate. Before this epitaxial growth step, the method comprises a step wherein the surface of the semiconductor substrate is cleaned by heating the semiconductor substrate to a pre-processing temperature that is lower than the film-forming temperature.