IDEAL OXYGEN PRECIPITATING SILICON WAFERS WITH NITROGEN/CARBON STABILIZED OXYGEN PRECIPITATE NUCLEATION CENTERS AND PROCESS FOR MAKING THE SAME
摘要
A silicon wafer having a controlled oxygen precipitation behavior such that a denuded zone extending inward from the front surface and oxygen precipitates in the wafer bulk sufficient for intrinsic gettering purposes are ultimately formed. Specifically, prior to formation of the oxygen precipitates, the wafer bulk comprises dopant stabilized oxygen precipitate nucleation centers. The dopant is selected from a group consisting of nitrogen and carbon and the concentration of the dopant is sufficient to allow the oxygen precipitate nucleation centers to withstand thermal processing such as an epitaxial deposition process while maintaining the ability to dissolve any grown-in nucleation centers.
申请公布号
EP1456875(A2)
申请公布日期
2004.09.15
申请号
EP20020799299
申请日期
2002.12.23
申请人
MEMC ELECTRONIC MATERIALS, INC.
发明人
LUCIANO, MULE STAGNO;LIBBERT, JEFFREY L.;PHILLIPS, RICHARD, J.;KULKARNI, MILIND;BANAN, MOHSEN M;BRUNKHORST, STEPHEN J.