Semiconductor device with improved capacitive element and method of forming the same

摘要

A semiconductor device includes: a digital circuit including a first capacitive element of metal-insulator-metal structure, and an analogue circuit including a second capacitive element of metal-insulator-metal structure. Bottom electrodes, capacitive insulation layers, and top electrodes of the first and second capacitive elements are formed in the same or common processes to each other. The bottom electrodes are electrically connected with contacts in an underlying inter-layer insulator. The top electrodes are electrically connected with other contacts in an overlying inter-layer insulator.