Type II quantum well optoelectronic devices

摘要

Semiconductor optoelectronic devices such as diode lasers are formed on GaAs with an active region with a GaAsN electron quantum well layer and a GaAsSb hole quantum well layer which form a type II quantum well. The active region may be incorporated in various devices to provide light emission at relatively long wavelengths, including light emitting diodes, amplifiers, surface emitting lasers and edge-emitting lasers.