METHOD FOR FORMING DIELECTRIC LAYER OF SEMICONDUCTOR DEVICE TO IMPROVE RETENTION

摘要

PURPOSE: A method for forming a dielectric layer of a semiconductor device is provided to improve retention characteristic of an ONO layer by forming a seed layer before depositing a nitride layer. CONSTITUTION: A lower oxide layer(106') is formed on the surface of a substrate. A seed layer of N atom is formed on a surface of the lower oxide layer. A nitride layer(108') is grown on the surface of the lower oxide layer. An upper oxide layer(110) is formed on the surface of the nitride layer. The seed layer of N atom is formed by performing a plasma process.