THIN FILM TRANSISTOR DISPLAY PLATE FABRICATION METHOD WITHOUT A PROCESS FOR FORMING THE TRANSMISSIVE ELECTRODE

摘要

PURPOSE: A TFT display plate is provided to form gate lines or data lines as transparent/line metal layers, and to simultaneously form a transmissive electrode with the layers, then to remove the line metal layers. CONSTITUTION: A polycrystal silicon layer(150a) is formed on an insulating substrate(110), and includes a source area(153a), a drain area(155a), and a channel area(154a). A gate insulating film(140) covers the polycrystal silicon layer(150a). Gate lines are formed on the gate insulating film(140), and wherein a portion of the gate lines overlaps with the channel area(154a). A transmissive electrode(90) is formed on the gate insulating film(140). The first interlayer insulating film(601) is formed on the substrate(110). Data lines are connected to the source area(153a). A drain electrode(175a) is connected to the drain area(155a). The second interlayer insulating film(602) is formed on the substrate(110). A reflective electrode(80) is connected to the drain electrode(175a), and has a transmissive window.