| 摘要 |
PURPOSE: A method for forming a bit line of a semiconductor device is provided to reduce loss of a tungsten layer in a post cleaning process by improving a step coverage characteristic of a nitride layer for hard mask. CONSTITUTION: An interlayer dielectric(22) is formed on a semiconductor substrate(21). A bit line contact(23) is formed by etching the interlayer dielectric. A barrier metal layer, a tungsten layer(24), and a nitride layer(25) for hard mask are sequentially deposited on the bit line contact and the interlayer dielectric. A CMP process is performed on a part of the nitride layer. The residual slurries are removed by performing a post cleaning process. The nitride layer for hard mask is deposited under the conditions of the pressure of 2 to 4 Torr, the temperature of 350 to 450 degrees centigrade, RF power of 400 to 600W by performing a PECVD process using SiH4, NH3, and N2 gases.
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