ETCHING COMPOSITION FOR SILICON GERMANIUM OF SEMICONDUCTOR DEVICE AND ETCHING METHOD USING THE SAME TO REDUCE DAMAGE OF SILICON LAYER

摘要

PURPOSE: Etching composition for silicon germanium of a semiconductor device and etching method using the same are provided to reduce damage of a silicon layer by etching a silicon-germanium layer according to high etching selectivity. CONSTITUTION: Etch-composition for silicon-germanium is formed with nitric acid of 35.4 to 41.3 weight percent, hydrofluoric acid of 0.5 to 0.6 weight percent, acetic acid of 1.1 to 2.1 weight percent, deionized water of 56 to 63 weight percent. The etch selectivity of silicon to silicon-germanium is 1 to 100. An etch process of the etch-composition for silicon-germanium is performed according to the etch selectivity.