METHOD FOR FORMING THIN FILM USING ATOMIC LAYER DEPOSITION METHOD TO IMPROVE STEP COVERAGE OF THIN FILM

摘要

PURPOSE: A method for forming a thin film using an atomic layer deposition method is provided to improve the step coverage of the thin film by using the first reactant having a surface absorbing characteristic superior to the source material and the second reactant having the surface absorption characteristic inferior to the source material. CONSTITUTION: A source material is fed to a reaction chamber(S21). The source material of the reaction chamber is purged(S22). The first reactant having a surface absorption characteristic superior to the source material is fed to the reaction chamber and the second reactant having the surface absorption characteristic inferior to the source material is fed to the reaction chamber(S23). The second reactant within the reaction chamber is changed into the state of the plasma(S24).