SEMICONDUCTOR MEMORY CELL AND METHOD FOR PRODUCING SAID CELL

摘要

The invention relates to a semiconductor memory cell and a method for producing said cell. According to said method, the capacity (CFe) of a ferroelectric capacitor assembly, which is formed by the contact and/or a region of an essentially constant potential between the gate isolation region (GOX) and a ferroelectric region (16), the ferroelectric region (16) and an upper gate electrode (18), is configured in a reduced manner relative to conventional conditions and/or relative to the capacity (CGOX) of a gate insulation capacitor assembly, which is formed by the border surface between a channel region (K) and the gate insulation region (GOX), the gate insulation region (GOX) and the contact and/or the region of an essentially constant potential between the gate isolation region (GOX) and the ferroelectric region (16).