SRAM DEVICE HAVING STRAPPING REGION FOR MINIMIZING OFF CURRENT

摘要

PURPOSE: An SRAM device having a strapping region is provided to reduce the off-current of driving transistors and the power consumption by increasing the threshold voltages of the driving transistors. CONSTITUTION: A plurality of cell active regions(101) are formed with the first active region formed on the first well region and the second active region formed on the second well region. An extended part of the second well region is arranged on a strapping region(70). The first and the second gate electrodes(110a,110b) are formed across the first and the second active regions. The first and the second gate electrodes are formed in parallel to each other. A common source region is extended from the second active region between the first and the second gate electrodes. A common source line(120) is electrically connected to the common source region. The common source line is formed across the strapping region. The first ground voltage supply line(130) is formed across the common source line within the strapping region and is electrically connected to the common source line. A well voltage supply line is arranged in one side of the ground line within the strapping region and is electrically connected to the extended part of the second well.