发明名称 CONNECTION TECHNOLOGY FOR POWER SEMICONDUCTORS COMPRISING A LAYER OF ELECTRICALLY INSULATING MATERIAL THAT FOLLOWS THE SURFACE CONTOURS
摘要 A layer of electrically insulating material is applied to a substrate and a component located thereon, in such a way that said layer follows the surface contours.
申请公布号 WO2004077548(A2) 申请公布日期 2004.09.10
申请号 WO2004EP00629 申请日期 2004.01.26
申请人 SIEMENS AKTIENGESELLSCHAFT;SELIGER, NORBERT;WEIDNER, KARL;ZAPF, JOERG 发明人 SELIGER, NORBERT;WEIDNER, KARL;ZAPF, JOERG
分类号 H01L21/60;H01L23/538;H01L25/07 主分类号 H01L21/60
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