| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a thin film solar cell, which is capable of measuring and controlling films directly and improving the thin film solar cell in efficiency as prescribed when the films are formed at high speed through mass-production equipment. <P>SOLUTION: A first electrode layer, a non-single crystal photoelectric conversion layer, and a second electrode layer are laminated on the surface of an electrical insulation board for the formation of the thin film solar cell. The photoelectric conversion layer is formed through a plasma CVD method wherein electric power is applied to a high-frequency electrode in a vacuum reaction chamber to decompose the material gas with a glow discharge in the method of manufacturing the thin film solar cell. In the method of manufacturing the thin film solar cell, a film forming condition under which the hydrogen volume ratio of a SiH<SB>2</SB>bond to a SiH bond (SiH<SB>2</SB>/SiH) in the photoelectric conversion layer is made 0.3 or below:1 is previously obtained, and the thin film is formed under the previously obtained condition that meets the above ratio of 0.3 or below to 1 with a peak-to-peak voltage (Vpp) induced on the high-frequency electrode at 300 V or below. <P>COPYRIGHT: (C)2004,JPO&NCIPI</p> |
