| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a polishing method which allows a polishing speed for a Low-k film to be enhanced, without decomposing composition of the film itself as compared with a case where the Low-k film is polished by polishing liquid used when an oxide film is polished, and which further allows the amount of residual foreign substances after the Low-k film is polished and cleaned to be not more than the amount of residual foreign substances after the oxide film is polished and cleaned. <P>SOLUTION: In this chemical mechanical polishing method, a low dielectric constant film is polished, which is formed on a silicon wafer, includes a methyl group, and has a dielectric constant of 3.0 or less, using the polishing liquid including a hydroxyl group. Further, the silicon wafer is cleaned with the polishing liquid applied to the surface of the low dielectric constant film without drying the surface of the low dielectric constant film completely after polish. <P>COPYRIGHT: (C)2004,JPO&NCIPI |
