EPITAXIAL SUBSTRATE AND SEMICONDUCTOR LAMINATE STRUCTURE

摘要

PROBLEM TO BE SOLVED: To provide a new epitaxial substrate capable of forming a nitride layer group having low dislocation and high crystallization, and to provide a semiconductor laminate structure using the epitaxial substrate. SOLUTION: A group III nitride ground layer 2 and a group III nitride layer 3 containing at least Ga are successively laminated on a prescribed base material 1, and a group III nitride intermediate layer formed at 600-950°C and containing Ga is included in the group III nitride layer 3 to produce an epitaxial substrate 10. COPYRIGHT: (C)2004,JPO&NCIPI