| 摘要 |
PROBLEM TO BE SOLVED: To solve the problem that wiring defect is caused by disappearance of Cu when a wide wiring and a fine wiring are conductively connected through a contact hole by using Cu for a wiring material. SOLUTION: In the process of formation of a second buried wiring in an upper layer of a first buried wiring 105, a contact hole 108 and a dummy hole 109 of different opening diameters are formed on the first buried wiring 105. The dummy hole 109 is formed with an opening diameter which is larger than that of the contact hole 109. Accordingly, the surface of the first buried wiring 105 is exposed only in a bottom of the dummy hole 109 by using the difference in etching rate. While adhesion to a wiring material is relatively raised at the bottom of the contact hole 108, adhesion to the wiring material is relatively lowered at the bottom of the dummy hole 109 by doing etching damage to the exposed part. COPYRIGHT: (C)2004,JPO&NCIPI |
