| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device in which dielectric loss of an element formed on an SOI layer can be reduced furthermore, and to provide its fabricating method. SOLUTION: A groove G is formed by removing a part of a supporting substrate 1. The groove G is formed directly under an element in which a dielectric loss due to the supporting substrate 1 is expected. Since a very thin silicon crystal exists or the silicon crystal does not exist in the groove G as a dielectric, dielectric loss of the overlying element becomes extremely small. When that element is employed as a component in a high frequency circuit, the high frequency circuit exhibits high response and stability with regard to processing of a high frequency signal. COPYRIGHT: (C)2004,JPO&NCIPI |
