| 摘要 |
PROBLEM TO BE SOLVED: To provide a rewritable nonvolatile semiconductor memory which can be intended to enhance a current characteristic, and to provide a method for manufacturing the semiconductor memory. SOLUTION: After an element isolated layer 2 is formed in a semiconductor substrate 1, a p-type well 3 is formed in the semiconductor substrate 1. After an n-type semiconductor region 4 is formed in the p-type well 3, a memory gate electrode 10 is formed on a specific region of the n-type semiconductor region 4. In a region which is on the n-type semiconductor region 4 and is adjacent to the memory gate electrode 10, a control gate electrode 18 of which a part runs onto the memory gate electrode 10 is formed. Thereafter, an n-type semiconductor region 19 is formed in the semiconductor substrate 1 beneath the control gate electrode 18 by ion implantation transmitting the control gate electrode 18. COPYRIGHT: (C)2004,JPO&NCIPI
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