发明名称 Driving circuit for a control terminal of a bipolar transistor in emitter-switching configuration having a resonant load
摘要 The invention relates to a driving circuit for a control terminal (B1) of a bipolar transistor (T1) inserted, in the emitter-switching configuration, between a resonant load (3) and a voltage reference (GND), the driving circuit comprising at least a capacitor (C2) connected between the control terminal (B1) and the voltage reference (GND). <??>Advantageously according to the invention, the driving circuit further comprises: an additional resonance capacitor (C1b) connected between a collector terminal (TC1) of the bipolar transistor (T1) and a circuit node (X3); a first diode (D2) inserted between the circuit node (X3) and the control terminal (B1); and a second diode (D3) inserted between the circuit node (X3) and the voltage reference (GND). <??>The invention also relates to a driving method for a control terminal (B1) of a bipolar transistor (T1) in the emitter-switching configuration. <IMAGE>
申请公布号 EP1455453(A1) 申请公布日期 2004.09.08
申请号 EP20030425141 申请日期 2003.03.05
申请人 STMICROELECTRONICS S.R.L. 发明人 SCOLLO, ROSARIO;BUONOMO, SIMONE
分类号 H03K17/042;H03K17/567;(IPC1-7):H03K17/567;H03K17/64 主分类号 H03K17/042
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