发明名称 |
Diffused junction photodetector and fabrication technique |
摘要 |
A diffused junction semiconductor (12) for detecting light (48) at a predetermined wavelength is provided including a base (30) and an epitaxial structure (32) electrically coupled to the base (30). The epitaxial structure (32) forms a p-n junction (38) in the base (30). The epitaxial structure (32) includes at least one diffusion layer (50) electrically coupled to the base (30). At least one of the diffusion layers (50) contributes impurities in at least a portion of the base (30) to form the p-n junction (38) during growth of the epitaxial structure (32). A method for performing the same is also provided.
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申请公布号 |
US6787818(B2) |
申请公布日期 |
2004.09.07 |
申请号 |
US20020172310 |
申请日期 |
2002.06.14 |
申请人 |
THE BOEING COMPANY |
发明人 |
MORRISON CHARLES B.;SUDHARSANAN RENGARAJAN;HADDAD MORAN;KRUT DIMITRI;BOISVERT JOSEPH C.;KING RICHARD R.;KARAM NASSER H. |
分类号 |
H01L31/00;H01L31/0216;H01L31/0328;H01L31/0336;H01L31/068;H01L31/072;H01L31/075;H01L31/109;(IPC1-7):H01L31/032;H01L31/033 |
主分类号 |
H01L31/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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