发明名称 |
Semiconductor memory device |
摘要 |
A semiconductor memory device has a plurality of memory cells each having a first transistor, a second transistor having a source or drain connected to one portion of the source or drain of the first transistor, and a third transistor having a source or drain connected to the other portion of the source or drain of the first transistor. The first transistor accumulates, in the channel thereof, charges transferred from the second and third transistors.
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申请公布号 |
US6788565(B2) |
申请公布日期 |
2004.09.07 |
申请号 |
US20030394262 |
申请日期 |
2003.03.24 |
申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
发明人 |
AGATA MASASHI;TAKAHASHI KAZUNARI;SHIRAHAMA MASANORI;KURODA NAOKI;SADAKATA HIROYUKI;NISHIHARA RYUJI |
分类号 |
G11C11/401;G11C11/405;H01L21/8242;H01L27/108;(IPC1-7):G11C11/40 |
主分类号 |
G11C11/401 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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