METHOD FOR FORMING DAMASCENE METAL LINE USING TITANIUM WETTING LAYER

摘要

PURPOSE: A method for forming a damascene metal line is provided to reduce the manufacturing cost by using a barrier layer including a diffusion barrier and a titanium wetting layer as a barrier layer of a copper layer. CONSTITUTION: A bottom metal line(12), the first diffusion barrier(14), and an interlayer dielectric(16) are sequentially formed on an insulating layer(10) of a semiconductor substrate. An opening part is formed on the interlayer dielectric. The second diffusion barrier is formed on the inside of the opening part. The bottom metal line is exposed by removing the first and the second diffusion barriers from the bottom of the opening part. A wetting liner(38) is coated on the exposed bottom metal line and the second diffusion barrier of the sidewall of the opening part. A copper seed liner(40) is coated on the wetting liner.