METHOD FOR FORMING CAPACITOR OF SEMICONDUCTOR DEVICE, FOR SIMPLIFYING FABRICATING PROCESS

摘要

PURPOSE: A method for forming a capacitor of a semiconductor device is provided to remove a photoresist strip process and simplify a fabrication process by performing an etch-back process after forming an adhesive layer. CONSTITUTION: An insulating layer pattern(110) having an opening part is formed on a semiconductor substrate(100). A lamination structure including a tungsten plug(130) and a barrier metal layer is formed within the opening part. The insulating layer pattern is etched partially. An adhesive layer(150) is formed on the entire surface of the resultant structure. An upper part of the barrier metal layer is exposed by etching the adhesive layer. A bottom electrode(160), a dielectric layer, and a top electrode are sequentially formed on the barrier metal layer.