FERROELECTRIC MEMORY DEVICE HAVING EXPANDED PLATE ELECTRODE FOR EASY ELECTRICAL CONTACT AND FABRICATING METHOD THEREOF

摘要

PURPOSE: A ferroelectric memory device having an expanded plate electrode and a fabricating method thereof are provided to form a reliable contact structure between a plate line and a top electrode by connecting directly one plate line to top electrodes of ferroelectric capacitors between two adjacent rows within a cell array region. CONSTITUTION: A bottom interlayer dielectric(64,68) is formed on a semiconductor substrate(50). A plurality of ferroelectric capacitors(80) are arranged in columns and rows on the bottom interlayer dielectric. A top interlayer dielectric(84,88) having via holes is laminated on the entire surface of the semiconductor substrate including the ferroelectric capacitors. A plurality of plate electrodes(PL) are formed within the top interlayer dielectric. The plate electrodes are tangent to upper parts of the ferroelectric capacitors through the via holes.