METHOD FOR FABRICATING FLASH MEMORY DEVICE TO IMPROVE RETENTION CHARACTERISTIC

摘要

PURPOSE: A method for fabricating a flash memory device is provided to prevent the deterioration of retention characteristics by rounding a top edge part of a polysilicon layer. CONSTITUTION: A gate oxide layer(23), a polysilicon layer(24), and an organic bottom-anti-reflective layer are formed on a semiconductor substrate(21). A photoresist pattern is formed on the organic bottom-anti-reflective layer. The organic bottom-anti-reflective layer and the polysilicon layer are patterned. A top edge part of the patterned polysilicon layer is exposed by etching the photoresist pattern and the organic bottom-anti-reflective layer. A rounding shape is formed by removing the top edge part of the patterned polysilicon layer. A dielectric layer(27) is formed on a surface of the patterned polysilicon layer. A conductive layer(28) and a hard mask layer(29) are formed on the dielectric layer. A control gate and a floating gate are formed by performing an etch process.