GALLIUM NITRIDE SEMICONDUCTOR DEVICE AND FABRICATING METHOD THEREOF TO IMPROVE MANUFACTURING EFFICIENCY

摘要

PURPOSE: A gallium nitride semiconductor device and a fabricating method thereof are provided to simplify a fabrication process by forming the same metal layers as bonding pads on an n-type semiconductor layer and a p-type semiconductor layer. CONSTITUTION: An n-type semiconductor layer, a light emission layer, and a p-type semiconductor layer are formed on an upper surface of a substrate. The n-type semiconductor layer is partially exposed by etching a part of the p-type semiconductor layer. The first bonding pad is formed on the exposed part of the n-type semiconductor layer. The second bonding pad is formed on the p-type semiconductor layer. The first and the second bonding pads are formed with the same metal layers. Each bonding pad includes the first layer including Cr and the second layer including Au.