ION BEAM PROCESSING METHOD

摘要

When an area (24) including a fine reference hole (23) formed in advance by an ion beam in a light shield film (21) on a glass substrate (22) is scanned in a location other than an area to be processed (25) and the position of the detected reference hole is stored, a secondary ion signal having the same atomic species as that of ions implanted into a substrate, instead of a secondary ion signal having atomic species contained in a base film, is detected. When the area (24) including the reference hole is scanned in order to correct drift during processing, a secondary ion signal having the same atomic species as that of ions implanted is detected to detect the position of the position (26) of the reference hole, and the previous reference hole position is compared with the current reference hole position to determine the moved distance of a reference hole and define it as a drift amount.