发明名称 |
Semiconductor device having high-piemittivity insulation film and production method therefor |
摘要 |
A semiconductor device has a substrate and a dielectric film formed directly or indirectly on the substrate. The dielectric film contains a metal silicate film, and a silicon concentration in the metal silicate film is higher in a center portion in the film thickness direction than in an upper portion and in a lower portion.
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申请公布号 |
US2004171276(A1) |
申请公布日期 |
2004.09.02 |
申请号 |
US20030477109 |
申请日期 |
2003.11.10 |
申请人 |
WATANABE HEIJI;ONO HARUHIKO;IKARASHI NOBUYUKI |
发明人 |
WATANABE HEIJI;ONO HARUHIKO;IKARASHI NOBUYUKI |
分类号 |
H01L21/28;H01L21/316;H01L29/51;(IPC1-7):H01L21/31 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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