发明名称 |
Method and device for programming an electrically programmable non-volatile semiconductor memory |
摘要 |
A device and method for programming an electrically programmable memory applies at least one first programming pulse to a group of memory cells (MC1-MCk) of the memory, accesses the memory cells of the group to ascertain a programming state thereof, and applies at least one second programming pulse to those memory cells in the group whose programming state is not ascertained to correspond to a desired programming state. A voltage applied to a control electrode of the memory cells is varied between the at least one first programming pulse and the at least one second programming pulse according to a forecasted change in biasing conditions of the memory cells in the group between said at least one first and at least one second programming pulses. Undesired over-programming of the memory cells is thus avoided.
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申请公布号 |
US2004170061(A1) |
申请公布日期 |
2004.09.02 |
申请号 |
US20030729829 |
申请日期 |
2003.12.05 |
申请人 |
STMICROELECTRONICS S.R.L. |
发明人 |
MICHELONI RINO;RAVASIO ROBERTO |
分类号 |
G11C11/56;G11C16/10;G11C16/34;(IPC1-7):G11C11/34 |
主分类号 |
G11C11/56 |
代理机构 |
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代理人 |
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地址 |
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