<p>A memory device includes a data line (DATA-BUS) for connection to a memory cell, a reference line (Reference-BUS) for reference, a precharge circuit (101), a load circuit (102), and an amplification circuit (103). The precharge circuit is connected to the data line and the reference line so as to precharge the data line and the reference line. The load circuit is connected to the data line and the reference line so as to apply a first constant current to the data line and a second constant current which is smaller than the first constant current to the reference line. The amplification circuit is connected to the data line and the reference line so as to amplify a differential voltage between the data line and the reference line.</p>
