SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device together with its manufacturing method wherein no leaking occurs in an initial condition and an anti-fuse that can be written in a conductive state by a simple writing circuit is mounted. SOLUTION: An isolated area 3 formed of dispersed insulator layer is formed in an element formation area on a semiconductor substrate 1, and diffusion layers 6 are formed on both sides of the isolated area 3, and then electrodes are connected to the respective diffusion layers 6 to form an anti-fuse. COPYRIGHT: (C)2004,JPO&NCIPI