发明名称 CAPACITY VALUE MEASURING CIRCUIT AND ANALYSIS METHOD FOR WIRING CHARACTERISTIC
摘要 PROBLEM TO BE SOLVED: To provide a circuit for use in a CBCM in which measurement is possible separating a capacity component of an object to be measured. SOLUTION: A node N1 is electrically connected to a terminal P2 between drains of a PMOS transistor MP2 and a NMOS transistor MN2. A coupling capacity C<SB>c</SB>is formed between the node N1 and a node N2 as a measuring capacity forming part. The node N2 is connected to a pad 58 via the terminal P2 and a NMOS transistor MN3. A node N3 is connected to a terminal P3 between the drains of a PMOS transistor MP1 and a NMOS transistor MN1. In the node N3, a reference capacity C<SB>ref</SB>is formed as a dummy capacity. Electric currents I<SB>r</SB>, I<SB>t</SB>which are applied from a power source to the nodes N3,N1 are measured by ammeters 61, 62, respectively. An electric current I<SB>m</SB>which is induced by the node N2 and flows to a ground level is measured by an ammeter 63. COPYRIGHT: (C)2004,JPO&NCIPI
申请公布号 JP2004245826(A) 申请公布日期 2004.09.02
申请号 JP20040005857 申请日期 2004.01.13
申请人 RENESAS TECHNOLOGY CORP;MATSUSHITA ELECTRIC IND CO LTD 发明人 KUNIKIYO TATSUYA;WATANABE TETSUYA;KANEMOTO TOSHIKI;YAMASHITA KYOJI
分类号 G01R27/02;G01R27/26;(IPC1-7):G01R27/26 主分类号 G01R27/02
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