| 摘要 |
PROBLEM TO BE SOLVED: To provide a pressure contact semiconductor device wherein a part in which a ring gate is to be in contact with an aluminum gate can be positioned with superior precision, electric discharge between gaps is effectively prevented and reliability can be improved. SOLUTION: A gate electrode is formed on a circumference step of semiconductor substrate so as to face a pressure contact auxiliary block (6). Projecting contacts (1a', 1g) are formed on a prescribed position of the upper surface of a first gate electrode (1a) and abut against the pressure contact auxiliary block (6). In the upper surface of the gate electrode, a surface from the inner peripheral side as far as adjacent positions to the projecting contacts (1a', 1g) is coated with an insulating film (1d). The contacts (1a', 1g) are constituted of a projecting part (1g) which is collectively constituted with a second gate electrode (1a') or the gate electrode (1a). COPYRIGHT: (C)2004,JPO&NCIPI
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