| 摘要 |
PROBLEM TO BE SOLVED: To provide a method where subjects present in a prior art are solved, for manufacturing in large quantities integrated single electron devices which have high operating temperatures and can be operated even at room temperature at high yields. SOLUTION: A particulate 120 which is a capture site of electrons preattached to the surface of an insulator layer 210 formed on the substrate 200 is re-disposed by using the probe of a scanning probe microscope such as AFM/STM, self systematic pattern formation capability is expressed by interactions with three categories largely classified into three kinds, namely, interaction between the particulate 120 and the substrate 200, interaction of the particulates 120 with each other and interaction between a third medium present in surroundings of, or between the substrate 200 and the particulate 120 and the particulate 120, to constitute the method for preparing the single electron device by collectively forming two micro-tunnel junctions or more on the substrate 200. COPYRIGHT: (C)2004,JPO&NCIPI |
