发明名称 PLASMA TREATMENT METHOD
摘要 PROBLEM TO BE SOLVED: To provide a plasma treatment method with which a highly reliable fine pattern can be formed by removing a reactive deposition that is stuck within a vacuum container and may become a dust source. SOLUTION: In the plasma treatment method, a gas is exhausted while being fed into the vacuum container and a high frequency power is applied to a plasma source that is provided while facing a substrate electrode for placing a substrate thereon within the vacuum container, while controlling the inside of the vacuum container into a predetermined pressure, so that a plasma is generated within the vacuum container and a noble metal or a material containing a noble metal on the substrate is etched. After the end of the etching process, the inside of the vacuum container is cleaned by using an ammonia gas different from the etching process. COPYRIGHT: (C)2004,JPO&NCIPI
申请公布号 JP2004247553(A) 申请公布日期 2004.09.02
申请号 JP20030036433 申请日期 2003.02.14
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 YAMASHITA HIDEKI;KAI TAKAYUKI
分类号 H01L21/3065;(IPC1-7):H01L21/306 主分类号 H01L21/3065
代理机构 代理人
主权项
地址