SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD, AND DEPOSITION METHOD

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device which can prevent the degradation of the performance of a transistor by suppressing the diffusion of a dopant impurity added to a gate electrode into a channel region when a High-k insulation film is used as a gate insulation film, and also to provide a method of manufacturing the same. SOLUTION: The semiconductor device comprises the gate insulation film 15 and the gate electrode 16 formed thereon. The gate insulation film 15 includes an organic metal material and a nitride-contained film having a high dielectric constant 14 which is formed on a silicon substrate 10 by chemical vapor growth in which a nitride source material which contains silicon and nitrogen as components is used as a raw material. COPYRIGHT: (C)2004,JPO&NCIPI