| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing semiconductor device by which an element isolating region and a gate insulating layer can be formed satisfactorily at the time of forming transistors having different withstand voltages in the same substrate. SOLUTION: A low-withstand voltage transistor is formed in a first transistor forming region 10A, and a high-withstand voltage transistor is formed in a second transistor forming region 10B. Then a first insulating layer 120 is formed in the region 10B after a well 30 having prescribed conductivity is formed and a second insulating layer 130 is formed in the region 10A. In addition, a stopper insulating layer is formed on the whole surface of a substrate 10. Moreover, a gate insulating layer 12 and a stopper layer 14 are formed in the region 10B, and a pad layer 13 and another stopper layer 14 are formed in the region 10A by patterning the first and second insulating layers 120 and 130 and stopper insulating layer. Finally, trenches 16 are formed by using the gate insulating layer 13, stopper layers 14, and pad layer 13 as masks. COPYRIGHT: (C)2004,JPO&NCIPI
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